CS3N20A23H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanc.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID .
VDSS
200
CS3N20 A23H, the silicon N-channel Enhanced
ID
3
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
2.5
which reduce the conduction loss, improve switching
RDS(ON)Typ
1.2
performance and enhance the avalanch.
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